Provided is a method of manufacturing a semiconductor device including the steps of: forming a first insulating film on a silicon substrate; forming a capacitor in which a lower electrode, a capacitor dielectric film configured of ferroelectric material, and an upper electrode are laminated in this order on the first insulating film; forming a silicon nitride film by a catalytic CVD method as a first capacitor protect insulating film covering the capacitor and the first insulating film; and forming a second insulating film on the first capacitor protect insulating film.