A metal sulfide based non-volatile memory device is provided herein. The device is comprised of a substrate, a backplane, a planar memory media including a dense array of metal sulfide based memory cells, and a MEMS probe based actuator. The cells of the memory device are operative to be of two or more states corresponding to various levels of impedance. The MEMS actuator is operable to position micro/nano probes over the appropriate cells to enable reading, writing, and erasing the memory cells by applying a bias voltage.