A layered capacitor structure comprises two or more
semiconductor/dielectric plates formed above an insulating surface which
provides mechanical support, with the plates arranged in a vertical stack
on the insulating surface. An insulating layer is on each plate,
patterned and etched to provide an opening which allows the top of one
plate to be in physical and electrical contact with the bottom of the
subsequent plate. Contact openings are provided through the insulating
layers, each of which provides access to a respective semiconductor layer
and is insulated from any other semiconductor/dielectric plate.
Electrical contacts through the contact openings provide electrical
connections to respective semiconductor layers. The present structure can
include as many stacked layers as needed to provide a desired total
capacitance or range of capacitances.