A sense amplifying circuit capable of operating with a lower voltage and/or a nonvolatile memory device including the same may be provided. The nonvolatile memory device may include a nonvolatile memory cell array including a first bit line connected with a first memory cell and/or a second bit line connected with a first reference memory cell, and/or a sense amplifying circuit configured to sense data stored in the first memory cell based on a current flowing in the first bit line and/or a current flowing in the second bit line. The sense amplifying circuit may include a first comparator comparing a bit line voltage with a first reference voltage and/or outputting a first comparison signal, a second comparator comparing a reference bit line voltage with a second reference voltage and/or outputting a second comparison signal, a first load transistor operating based on the first comparison signal, a second load transistor operating based on the second comparison signal, and/or a sense amplifier sensing the data stored in the first memory cell based on the first comparison signal and/or the second comparison signal.