The invention includes methods of forming pluralities of capacitors. In one implementation, a method of forming a plurality of capacitors includes anodically etching individual capacitor electrode channels within a material over individual capacitor storage node locations on a substrate. The channels are at least partially filled with electrically conductive capacitor electrode material in electrical connection with the individual capacitor storage node locations. The capacitor electrode material is incorporated into a plurality of capacitors. Other aspects and implementations are contemplated.