A gallium nitride-based compound semiconductor light-emitting device is
disclosed which includes an n-type semiconductor layer of a gallium
nitride-based compound semiconductor, a light-emitting layer of a gallium
nitride-based compound semiconductor and a p-type semiconductor layer of
a gallium nitride-based compound semiconductor formed on a substrate in
this order, and has a negative electrode and a positive electrode
provided on the n-type semiconductor layer and the p-type semiconductor
layer, respectively. The negative electrode includes a bonding pad layer
and a contact metal layer which is in contact with the n-type
semiconductor layer, and the contact metal layer is composed of a Cr--Al
alloy.