A DRAM refresh period adjustment technique based on the retention time of one or more unused memory cell(s) having characteristics very similar to the characteristics of the memory cell(s) with the shortest retention time used in the DRAM array. In a particular implementation of the technique of the present invention, the refresh period of a DRAM array is adjusted through the use of one or more of the DRAM bits that fail to meet the retention time requirement and have, therefore, been replaced by redundant DRAM bits. These replaced bits are then used to indicate the refresh period for the DRAM is the maximum it can be for the DRAM under then current operating conditions.