A system is provided for forming a semiconductor device. Layers of gate
dielectric material, gate material, and cap material are formed on a
semiconductor substrate. The cap material and a portion of the gate
material are processed to form a cap and a gate body portion. A wing on
the gate body portion is formed from a remaining portion of the gate
material. The gate dielectric material under a portion of the wing on the
gate body portion is removed to form a gate dielectric. A lightly-doped
source/drain region is formed in the semiconductor substrate using the
gate body portion and the wing.