A method for electrically testing a wafer that includes: receiving a wafer having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of openings in the second layer; directing towards the wafer a first set of beams of charged particles that are oriented at a first set of angles in relation to the wafer, wherein each angle of the first set of angles deviates substantially from normal, so as to pre-charge an area of the second layer without substantially pre-charging the first layer; scanning the area of the wafer by a second set of beams of charged particles that are oriented at a second set of angles in relation to the wafer, and collecting charged particles scattered from the area wafer. A system for electrically testing a semiconductor wafer, the system including: at least one charged particle beam source; at least one detector, adapted to collect charged particles scattered from the wafer; wherein the wafer comprises a first layer that is at least partly conductive and a second layer formed over the first layer, following production of openings in the second layer; wherein the system is adapted to: (i) direct towards the wafer a first set of beams of charged particles that are oriented at a first set of angles in relation to the wafer, wherein the first angle deviates substantially from normal, so as to pre-charge an area of the second layer without substantially pre-charging the first layer; (ii) scan the area of the wafer by a second set of beams of charged particles that are oriented at a second set of angles in relation to the wafer, and collect charged particles scattered from the area of the wafer.