A process and system for anisoptropically dry etching through a doped silicon layer is described. The process chemistry comprises SF.sub.6 and a fluorocarbon gas. For example, the fluorocarbon gas can include C.sub.xF.sub.y, where x and y are integers greater than or equal to unity, for example, C.sub.4F.sub.8.

 
Web www.patentalert.com

< Systems and methods for providing diagnostic information using EDC transceivers

> Methods and systems for automatic body-contouring imaging

> Sensor apparatus power transfer, communication and maintenance methods and apparatus

~ 00518