The invention describes an integrated-photonics arrangement, implementable
in a multi-layer III-V semiconductor structure, which has a semiconductor
substrate; an epitaxial semiconductor structure grown on this substrate
in one growth step; a common waveguide; and a plurality of
wavelength-designated waveguides; all the waveguides being formed in this
epitaxial structure using conventional semiconductor processing
techniques. Each waveguide being defined by the bandgap wavelength of its
core region and all the waveguides being arranged vertically in order of
ascending bandgap wavelength; with the common waveguide placed at the
bottom of the structure and the wavelength-designated waveguide having
the longest bandgap wavelength placed at the top of the structure. In
use, the bandgap wavelength of the common waveguide being well below any
operating wavelength, therefore providing conditions for low-loss
propagation of each operating wavelength to its designated waveguide
through the common waveguide. The invention discloses a method of
wavelength demultiplexing (multiplexing) for optical signals in a
plurality of wavelengths, which are co- or bi-directionally propagating
within the integrated-photonics arrangement, by vertical splitting them
from (combining them into) the common waveguide into (from) wavelength
designated waveguides.