An improved MRAM cell may include a first, second, and third contact, a first MTJ between the first and second contact, and a MTJ between the second and third contact. The MRAM cell is nonconductive between the first and second MTJ. The first MTJ may include a first free layer with a first switching field, and the second MTJ may include a second free layer with a second switching field. If the first switching field is substantially higher than the second switching field, the first MTJ may be a reference element for the second MTJ. If the first switching field is adequately higher than the second switching field, the first and second MTJ may each contain a data bit. If the first switching field is substantially similar to the second switching field, the first and second MTJs may contain identical data bits connected in series.