A semiconductor device including a fluorine diffusion barrier layer and a method for manufacturing the same are provided. The semiconductor device includes a specific pattern formed over a semiconductor substrate, a fluorine diffusion barrier layer formed over the specific pattern, and an interlayer insulating layer containing fluorine formed over the fluorine diffusion barrier layer. The fluorine diffusion barrier layer may be used to essentially prevent fluorine from being diffused into a specific pattern formed of a metal or tetra-ethyl-ortho-silicate (TEOS) layer and thus to prevent corrosion and void formation that might otherwise be caused by HF.