The semiconductor device includes a thin film transistor; a first
interlayer insulating film over the thin film transistor; a first
electrode electrically connected to one of a source region and a drain
region, over the first interlayer insulating film; a second electrode
electrically connected to the other of the source region and the drain
region; a second interlayer insulating film formed over the first
interlayer insulating film, the first electrode, and the second
electrode; a first wiring electrically connected to one of the first
electrode and the second electrode, on the second interlayer insulating
film; and a second wiring not electrically connected to the other of the
first electrode and the second electrode, on the second interlayer
insulating film; in which the second wiring is not electrically connected
to the other of the first electrode and the second electrode by a
separation region formed in the second interlayer insulating film.