A memory cell and method for making a memory cell in accordance with embodiments of the present invention includes two or more tunnel diodes, a loading system, and a driving system. The two or more tunnel diodes are coupled together, the loading system is coupled to the tunnel diodes and the driving system is coupled to the tunnel diodes and the loading system. The driving system drives a sense node from the tunnel diodes, the loading system, and the driving system between at least three or more substantially stable logic states.