The present invention relates to a I.PI.-nitride compound semiconductor light emitting device comprising an active layer with the multi-quantum wells interposed between an n-In.sub.xAl.sub.yGa.sub.zN(x+y+z=1, 0

 
Web www.patentalert.com

< Integrated getter for vacuum or inert gas packaged LEDs

> Lattice-mismatched semiconductor structures on insulators

> Oxygen-doped n-type gallium nitride freestanding single crystal substrate
~ 00526