Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide Sb.sub.xSe.sub.100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of Sb.sub.xSe.sub.100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.