A semiconductor device manufacturing method, includes a step of forming a
first alumina film (underlying insulating film) 37 on a semiconductor
substrate 20, a step of forming a first conductive film 41, a
ferroelectric film 42, and a second conductive film 43 in sequence on the
first alumina film 37, a step of forming a mask material film 45 on the
second conductive film 43, a step of shaping the mask material film 45
into an auxiliary mask 45a, a step of shaping the second conductive film
43 into an upper electrode 43a by an etching using the auxiliary mask 45a
and a first resist pattern 46 as a mask, a step of shaping the
ferroelectric film 42 into a capacitor dielectric film 42a by patterning,
and a step of shaping the first conductive film 41 into a lower electrode
41a by patterning, whereby a capacitor Q is constructed by the lower
electrode 41, the capacitor dielectric film 42a, and the upper electrode
43a.