A phase change memory device may include an integrated circuit substrate
and first and second phase change memory elements on the integrated
circuit substrate. The first phase change memory element may include a
first phase change material having a first crystallization temperature.
The second phase change memory element may include a second phase change
material having a second crystallization temperature. Moreover, the first
and second crystallization temperatures may be different so that the
first and second phase change memory elements are programmable at
different temperatures. Related methods and systems are also discussed.