Dual seed semiconductor photodetectors and methods to fabricate thereof
are described. A dual seed semiconductor photodetector is formed directly
on an insulating layer on a substrate. The dual seed semiconductor
photodetector includes an optical layer formed on a dual seed
semiconductor layer. The dual seed semiconductor layer includes a seed
layer and a buffer layer. The seed layer of a first material is formed on
an insulating layer over a substrate. The buffer layer is formed on the
seed layer. Next, an optical layer of a second material is formed on the
buffer layer. The buffer layer includes the first material and the second
material. In one embodiment, the first material is silicon. In one
embodiment, the second material is germanium.