In a photoelectric conversion device, in a contact between a p-type
semiconductor 3a and an electrode 2, an n-type semiconductor 6 of a
conductivity type opposite to that of the p-type semiconductor is
provided between the p-type semiconductor 3a and the electrode 2. The
existence of the n-type semiconductor 6 allows a recombination rate of
photo-generated carriers excited by incident light to be effectively
reduced, and allows a dark current component to be effectively prevented
from being produced. Therefore, it is possible to improve photoelectric
conversion efficiency as well as to stabilize characteristics. Further, a
tunnel junction is realized by increasing the concentration of a doping
element in at least one or preferably both of the p-type semiconductor 3a
and the n-type semiconductor 6 in a region where they are in contact with
each other, thereby keeping ohmic characteristics between the
semiconductor and the electrode good.