A set of non-volatile storage elements are erased to an erased threshold voltage distribution. A multi-pass programming process is performed that programs the set of non-volatile storage elements from the erased threshold voltage distribution to a set valid data threshold voltage distributions. Each programming pass has one or more starting threshold voltage distributions and programs non-volatile storage elements to at least two ending threshold voltage distributions.

 
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< Disk drive employing error threshold counters to generate an ECC error distribution

> Variable initial program voltage magnitude for non-volatile storage

> Scheduling of housekeeping operations in flash memory systems
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