A flash EEPROM or other type of memory cell array having adjacent charge storage elements is formed with a gas filled void between them in order to reduce the level of capacitive coupling between storage elements, thus reducing cross-coupling between charge storage elements and resulting errors occurring in the data read from the array.

 
Web www.patentalert.com

< Non-volatile memory with redundancy data buffered in remote buffer circuits

> Recyclying faulty multi-die packages

> Non-volatile memory and method with power-saving read and program-verify operations
~ 00537