A distributed feedback semiconductor laser may have (1) a controlled complex-coupling coefficient which is not affected by grating etching depth variation, and (2) facet power asymmetry with no facet reflection which eliminates a random effect of facet grating phase. The device comprises a multiple-quantum-well active region, and a complex-coupled grating formed by periodically etching grooves through a part of the active region. The semiconductor materials for a barrier layer where the groove etching is to be stopped, a regrown layer in the etched groove, and a laser cladding layer, are chosen all the same, so as to form an active grating entirely buried in the same material, providing a complex-coupling coefficient which is defined independently of the etching depth. Facet power symmetry may also be provided by composing the laser cavity of two sections ("front" and "back" sections) having different ("front" and "back") Bragg wavelengths.