A magnetic random access memory (MRAM) is disclosed. The MRAM includes a
first electrode, an antiferromagnetic layer formed over the first
electrode, a pinned layer formed over the antiferromagnetic layer, a
barrier layer formed over the pinned layer, a composite free layer formed
over the barrier layer, and a second electrode formed over the composite
free layer. The composite free layer includes a first magnetic layer, a
spacer layer and a second magnetic layer sequentially stacked over the
barrier layer and the spacer layer allows parallel coupling between the
first and second magnetic layers. A magnetic tunnel junction (MTJ) device
suitable for a memory unit of a magnetic memory device is also provided.