An input circuit of a semiconductor memory device includes a data input
circuit and a data pattern setting circuit. The data input circuit
receives first data, and generates second data by buffering the first
data, sampling buffered first data responsive to a write data strobe
(WDQS) signal, and parallelizing sampled data. The data pattern setting
circuit sets a pattern of the second data responsive to a test mode
signal and a data pattern select signal to generate third data.
Accordingly, the semiconductor memory device including the input circuit
may generate data of various patterns in a test mode, and may perform a
high-speed test using a low-speed tester.