A method for measuring a layer of a device is provided. In an embodiment, a set of baseline reflectance profiles may be generated from a corresponding set of baseline devices. Each of the baseline devices may include a layer with a known thickness. A reflectance profile may also be generated from the device, which may include a layer with an unknown thickness. The reflectance profile generated from the device may then be compared to the set of reflectance profiles generated from the set of the baseline devices to determine the thickness of the layer of the device.

 
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