A method of forming an air gap within a semiconductor structure by the
steps of: (a) using a sacrificial polymer to occupy a space in a
semiconductor structure; and (b) heating the semiconductor structure to
decompose the sacrificial polymer leaving an air gap within the
semiconductor structure, wherein the sacrificial polymer of step (a) is a
copolymer of bis[3-(4-benzocyclobutenyl)]1,n (n=2-12) alkyldiol
diacrylate (such as bis[3-(4-benzocyclobutenyl)]1,6 hexanediol
diacrylate) and 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene. In
addition, a semiconductor structure, having a sacrificial polymer
positioned between conductor lines, wherein the sacrificial polymer is a
copolymer of bis[3-(4-benzocyclobutenyl)]1,n (n=2-12)alkyldiol diacrylate
and 1,3 bis 2[4-benzocyclobutenyl(ethenyl)]benzene.