A solid-state imaging device includes a semiconductor substrate (1) with a photodetector portion (15). The photodetector portion (15) includes a p-type first impurity region (surface inversion layer) (6) formed in the semiconductor substrate (1) and an n-type second impurity region (photoelectric conversion region) (4) formed below the surface inversion layer (6). The photoelectric conversion region (4) is formed by introducing an n-type impurity into the semiconductor substrate (1). The surface inversion layer (6) is formed by introducing indium into a region of the semiconductor substrate (1) where the photoelectric conversion region (4) is formed.