A select gate structure for a non-volatile storage system include a select
gate and a coupling electrode which are independently drivable. The
coupling electrode is adjacent to a word line in a NAND string and has a
voltage applied which reduces gate induced drain lowering (GIDL) program
disturb of an adjacent unselected non-volatile storage element. In
particular, an elevated voltage can be applied to the coupling electrode
when the adjacent word line is used for programming. A reduced voltage is
applied when a non-adjacent word line is used for programming. The
voltage can also be set based on other programming criterion. The select
gate is provided by a first conductive region while the coupling
electrode is provided by a second conductive region formed over, and
isolated from, the first conductive region.