According to the present invention, a method of fabricating a semiconductor device is provided including forming a first interlayer insulating film 11, a crystalline conductive film 21, a first conductive film 23, a ferroelectric film 24 and a second conductive film 25 on a silicon substrate 1 in sequence, forming a conductive cover film 18 on the second conductive film 25, forming a hard mask 26a on the conductive cover film 18, forming a capacitor upon etching the conductive cover film 18, the second conductive film 25, the ferroelectric film 24 and the first conductive film 23 using the hard mask 26a as an etching mask in areas exposed from the hard mask 26a, and etching the hard mask 26a and the crystalline conductive film 21 exposed from the lower electrode 23a using an etching condition under which the hard mask 26a is etched.