A non-volatile memory element includes a first interlayer insulation layer
11 having a first through-hole 11a, a second interlayer insulation layer
12 having a second through-hole 12a formed on the first interlayer
insulation layer 11, a bottom electrode 13 provided in the first
through-hole 11, recording layer 15 containing phase change material
provided in the second through-hole 12, a top electrode 16 provided on
the second interlayer insulation layer 12, and a thin-film insulation
layer 14 formed between the bottom electrode 13 and the recording layer
15. In accordance with this invention, the diameter D1 of a bottom
electrode 13 buried in a first through-hole 11a is smaller than the
diameter D2 of a second through-hole 12a, thereby decreasing the thermal
capacity of the bottom electrode 13. Therefore, when a pore 14a is formed
by dielectric breakdown in a thin-film insulation layer 14 and the
vicinity is used as a heating region, the amount of heat escaping to the
bottom electrode 13 is decreased, resulting in higher heating efficiency.