A semiconductor laser diode comprises a p-n junction. The p-n junction comprises a substrate, an n-type semiconductor layer, a p-type semiconductor layer, and a quantum well. The quantum well is disposed between the n-type semiconductor layer and the p-type semiconductor layer. The substrate is formed from a first material system, the n-type semiconductor layer is formed from a second material system, the p-type semiconductor layer is formed from a third material system, and the quantum well is formed from a fourth material system. The second material system is different from the third material system. The second material system and the third material system are selected such that there is an increase in the rate of recombinations of the electrons from the n-type semiconductor layer and the holes from the p-type semiconductor layer in the quantum well. This results in a lower turn-on voltage for the semiconductor laser diode.