In a group III nitride compound semiconductor light emitting device
comprising an n-type semiconductor layer, a p-type semiconductor layer
having a superlattice structure in which a first layer comprising at
least Al and a second layer having a different composition from that of
the first layer are laminated repetitively, and an active layer
interposed between the n-type semiconductor layer and the p-type
semiconductor layer, wherein an Al composition of the first layer which
is the closest to the active layer is set to be lower than that of each
of the other first layers, and wherein a doping amount of a p-type
impurity in the first layer which is the closest to the active layer is
set to be smaller than that of the p-type impurity of each of the other
first layers or non-doped.