Provided is a method comprising: back grinding a back side or a semiconductor wafer W having a protective tape applied on the surface thereof leaving annularly an outer peripheral part un-ground; separating the protective tape from a surface of the semiconductor wafer W having an annular projected part formed in the outer peripheral part of the back side; applying a holding tape over the surface of the semiconductor wafer W from which the protective tape having been separated and a surface of a ring frame f; removing and separating the outer peripheral part in the semiconductor wafer applied and held on the holding tape, by annularly cutting; applying a dicing tape over the back side of the semiconductor wafer having been made flat and the back side of the ring frame; and separating the holding tape from the ring frame and the semiconductor wafer.