Aspects comprise sputtering targets comprising a base material carrier provided with a recessed pattern, such as a looping trench, to receive a more precious material to be sputtered during deposition processes. The looping trench can have a cross-section of varying depth based on an expected variation in the magnetic field. The more precious material is provided at least in the trench, for example by hot pressing, and also can be pressed into a layer across an entirety of a surface of the carrier. During operation, the desired deposition of the precious material can occur from the trench area. Thus, a higher percentage of the precious material in the target is used, reducing inventory costs. The base material can be selected based on characteristics of the more precious material, and based on goals including reducing diffusion of base material into precious material and galvanic reactions.