A magnetic junction memory array and methods of using the same are
described. The magnetic junction memory array includes a plurality of
electrically conductive word lines extending in a first direction, a
plurality of electrically conductive bit lines extending in a second
direction and forming a cross-point array with the plurality of
electrically conductive word lines, and a memory cell proximate to, at
least selected, cross-points forming a magnetic junction memory array.
Each memory cell includes a magnetic pinned layer electrically between a
magnetic bit and an isolation transistor. The isolation transistor has a
current source and a gate. The current source is electrically coupled to
the cross-point bit line and the gate is electrically coupled to the
cross-point word line. An electrically conductive cover layer is disposed
on and in electrical communication with the magnetic bits.