Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000.degree. C., a resistivity at 250.degree. C. that is less than or equal to 10.sup.16 .OMEGA.-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000.degree. C.). The bond strength between the semiconductor layer and the support substrate is preferably at least 8 joules/meter.sup.2. The semiconductor layer can include a hybrid region in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate preferably includes a depletion region which has a reduced concentration of the mobile positive ions.