Methods of performing nanoimprint lithography are described. For one method, a master tool and a stamper tool are formed to provide nanometer-scale imprinting. A release layer comprised of a perfluoropolyether diacrylate material is formed on the master tool and the stamper tool. The master tool and the stamper tool are used to form patterns in resist material, such as hole or pillar patterns. The resist material as described herein has lower viscosity and lower surface tension than prior resist materials allowing for more uniform replication of the patterns.