The present invention concerns a reference voltage generator (40) that provides a reference voltage (Vref new). The voltage generator (30) is operated at a supply voltage (Vdd) being lower than the Silicon bandgap voltage. It comprises a MOSFET transistor (MN; MN3; MP4; MP7) serving as transconductor (Gptat). An input node for feeding a drain current (I.sub.ptat) into the drain of said MOSFET transistor (MN; MN3; MP4; MP7) is provided and an output node is connected to the drain and gate of said MOSFET transistor (MN; MN3; MP4; MP7). A current generator (42) allows the MOSFET transistor (MN; MN3; MP4; MP7) to be operated in a specific mode where the drain current (I.sub.ptat) has a positive temperature coefficient (.alpha..sub.ptat) and the transconductor (Gptat) has a negative temperature coefficient (.alpha..sub.ptat). The dimensions (W, L) of the MOSFET transistor are chosen such that said negative temperature coefficient (.alpha.GM) approximates said positive temperature coefficient (.alpha..sub.ptat) such that said reference voltage (Vref new), as provided at said output node, is temperature-compensated.