A non-volatile memory device has a gate dielectric film formed between a floating gate and a control gate. The gate dielectric film is formed by forming an oxide film and a ZrO.sub.2/Al.sub.2O.sub.3/ZrO.sub.2 (ZAZ) film. Accordingly, the reliability of non-volatile memory devices can be improved while securing a high coupling ratio.

 
Web www.patentalert.com

< Scalable split-gate flash memory cell with high source-coupling ratio

> Modular CMOS analog integrated circuit and power technology

> Manufacturing method and controlling method of electronic device

~ 00554