A thin film transistor and a method of fabricating the same are disclosed. The method includes: sequentially depositing an amorphous silicon layer, a capping layer, and a metal catalyst layer; annealing the entire layer to crystallize the amorphous silicon layer into a polysilicon layer; removing the capping layer; and, when the capping layer is perfectly removed to make a contact angle of the polysilicon layer within a range of about 40 to about 80.degree., forming a semiconductor layer using the polysilicon layer.