A semiconductor laser device includes: an active layer having a single or multiple quantum well structure including a well layer of In.sub.wGa.sub.1-wN (0.08.ltoreq.w.ltoreq.0.2) and a barrier layer of In.sub.bGa.sub.1-bN (0.01.ltoreq.b.ltoreq.0.05); a cladding layer of Al.sub.yGa.sub.1-yN (0.ltoreq.y.ltoreq.0.1) provided on the active layer, the cladding layer including a ridge portion extending like a stripe in axial direction of an optical cavity and a non-ridge portion located on both sides of the ridge portion; and an overflow blocking layer of Al.sub.zGa.sub.1-zN (y