In a first aspect, a first apparatus is provided. The first apparatus is a
semiconductor device on a substrate that includes (1) a first
metal-oxide-semiconductor field-effect transistor (MOSFET); (2) a second
MOSFET coupled to the first MOSFET, wherein portions of the first and
second MOSFETs form first and second bipolar junction transistors (BJTs)
which are coupled into a loop; and (3) a conductive region that
electrically couples a source diffusion region of the first or second
MOSFET with a doped well region below the source diffusion region. The
conductive region is adapted to prevent an induced current from forming
in the loop. Numerous other aspects are provided.