The present invention relates to a high frequency surface acoustic wave device, which may be manufactured by the same manufacturing equipment, and with the same material, as those required for manufacturing a low frequency surface acoustic wave device. The disclosed high frequency surface acoustic wave device comprises: a piezoelectric substrate; a high acoustic velocity layer formed on the surface of the piezoelectric substrate whose acoustic velocity of the surface acoustic wave is larger than 5000 m/sec; an input transducing part; and an output transducing part; wherein the input transducing part and the output transducing part are formed in pair on or below the surface of the high acoustic velocity layer. Besides, the high acoustic velocity layer is preferably made of aluminum oxide, and formed on the surface of the piezoelectric substrate by an electron-beam evaporation process. The thickness thereof is preferably between 2 .mu.m and 20 .mu.m.