Memory element consisting of an electrode (2), a ferroelectric layer (3) adjoining the latter, a layer (4) made from non-ferroelectric material adjoining the ferroelectric layer (3) and an electrode (5) adjoining the layer (4) made from non-ferroelectric material, wherein the ferroelectric layer is at least 10 nanometers thick, the electrical resistance, which is formed by the non-ferroelectric layer and the ferroelectric layer, depends upon the direction of polarization in the ferroelectric layer, and wherein the memory element comprises means for measuring the electrical resistance of the non-ferroelectric layer and the ferroelectric layer.