Heterostructure devices incorporate carbon nanotube technology to
implement rectifying devices including diodes, rectifiers,
silicon-controlled rectifiers, varistors, and thyristors. In a specific
implementation, a rectifying device includes carbon nanotube and nanowire
elements. The carbon nanotubes may be single-walled carbon nanotubes. The
devices may be formed using parallel pores of a porous structure. The
porous structure may be anodized aluminum oxide or another material. A
device of the invention may be especially suited for high power
applications.