An object of the invention is to provide a reference voltage generation circuit relatively unaffected by ambient temperature, capable of supplying reference voltage equal to or less than the bandgap voltage of silicon. The reference voltage generation circuit includes: a current generation circuit which generates current; and a current-voltage conversion circuit which converts the current generated by said current generation circuit into voltage to generate reference voltage. The current generation circuit generates current which varies in value according to ambient temperature of the current generation circuit. The current-voltage conversion circuit includes two resistors, in which the current generated by the said current generation circuit flows, and which perform voltage conversion. One of the resistors has a positive temperature coefficient and the other has a negative temperature coefficient.