A method for growing films for use in integrated circuits using atomic
layer deposition and a subsequent converting step is described. In an
embodiment, the subsequent converting step includes oxidizing a metal
atomic layer to form a metal oxide layer. The atomic layer deposition and
oxidation step are then repeated to produce a metal oxide layer having
sufficient thickness for use as a metal oxide layer in an integrated
circuit. The subsequent converting step, in an embodiment, includes
converting the atomic deposition layer by exposing it to one of nitrogen
to form a nitride layer, carbon to form a carbide layer, boron to form a
boride layer, and fluorine to form a fluoride layer. Systems and devices
for performing the method, semiconductor devices so produced, and machine
readable media containing the method are also described.