A memory cell for storing a bit having one of two logic states. The memory cell includes a structure comprises a pair of electrically conductive shape memory alloy members separated by a dielectric. An electrical circuit applies a current pulse at a first time to the first electrically conductive member to place the structure is a first position corresponding to one of the two logic states and for applying a current pulse at a different time to change the position of the structure from the first position to a different position, such different position corresponding to a different one of the two logic states. Output circuitry is provided for detecting the logic state of the bit stored by the memory cell, such output circuitry comprising a position sensor for detecting whether the structure is in the first position or in the second position.